VS-25MT060WFAPBF www.vishay.com vishay semiconductors revision: 10-jun-15 1 document number: 94539 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 full bridge igbt mtp (warp speed igbt), 50 a features ? gen 4 warp speed igbt technology ?hexfred ? antiparallel diodes with ultrasoft reverse recovery ? very low conduction and switching losses ? optional smt thermistor ?al 2 o 3 dbc ? very low stray inductance desi gn for high speed operation ? speed 8 khz to 30 khz > 20 khz hard switching, > 200 khz resonant mode ? ul approved file e78996 ? designed and qualified for industrial level ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 benefits ? optimized for welding, ups and smps applications ? low emi, requir es less snubbing ? direct mounting to heatsink ? pcb solderable terminals ? very low junction to case thermal resistance product summary v ces 600 v i c dc 69 a v ce(on) 2.22 v speed 8 khz to 30 khz package mtp circuit full bridge mtp absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c t c = 25 c 69 a t c = 80 c 46 pulsed collector current i cm 200 peak switching current i lm 200 diode continuous forward current i f t c = 100 c 25 peak diode forward current i fm 200 gate to emi tter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 minute 2500 maximum power dissipation ? per single igbt p d t c = 25 c 195 w t c = 100 c 78
VS-25MT060WFAPBF www.vishay.com vishay semiconductors revision: 10-jun-15 2 document number: 94539 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) i ces includes also opposite leg overall leakage electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v (br)ces v ge = 0 v, i c = 250 a 600 - - v temperature coefficient of breakdown voltage ? v (br)ces / ? t j v ge = 0 v, i c = 4 ma (25 c to 125 c) - +0.6 - v/c collector to emitter saturation voltage v ce(on) v ge = 15 v, i c = 25 a - 2.22 3.14 v v ge = 15 v, i c = 50 a - 2.43 3.25 v ge = 15 v, i c = 25 a, t j = 150 c - 1.65 1.93 v ge = 15 v, i c = 50 a, t j = 150 c - 2.08 2.45 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3 - 6 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 250 a (25 c to 125 c) - - 17 - mv/c transconductance g fe v ce = 100 v, i c = 25 a, pw = 80 s - 43 - s zero gate voltage collector current i ces (1) v ge = 0 v, v ce = 600 v, t j = 25 c - - 250 a v ge = 0 v, v ce = 600 v, t j = 150 c - - 10 ma gate to emitter leakage current i ges v ge = 20 v - - 250 na diode forward voltage drop v fm i c = 25 a - 1.36 1.64 v i c = 50 a - 1.57 1.93 i c = 25 a; t j = 150 c - 1.19 1.42 i c = 50 a; t j = 150 c - 1.48 1.80 switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units total gate charge (turn-on) q g i c = 25 a v cc = 480 v ? v ge = 15 v - 175 263 nc gate to emitter charge (turn-on) q ge -2741 gate to collector charge (turn-on) q gc - 71 107 turn-on switching loss e on r g = 5 ? , i c = 25 a ? v cc = 480 v ? v ge = 15 v, t j = 25 c - 0.13 0.20 mj turn-off switching loss e off - 0.42 0.62 total switching loss e tot - 0.55 0.82 turn-on switching loss e on r g = 5 ? , i c = 25 a ? v cc = 480 v ? v ge = 15 v, t j = 125 c - 0.39 0.59 turn-off switching loss e off - 0.49 0.74 total switching loss e tot - 0.88 1.32 input capacitance c ies v ge = 0 v ? v cc = 30 v ? f = 1.0 mhz - 3610 5415 pf output capacitance c oes - 714 1071 reverse transfer capacitance c res -5887 diode reverse recovery time t rr v r = 200 v; ? i c = 25 a; ? di/dt = 200 a/s -50- ns diode peak reverse current i rr -4.5- a diode recovery charge q rr - 112 - nc diode peak rate of fall of ? recovery during t b di (rec)m /dt - 250 - a/s
VS-25MT060WFAPBF www.vishay.com vishay semiconductors revision: 10-jun-15 3 document number: 94539 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) standard version only i.e. without optional thermistor fig. 1 - maximum collector current vs. case temperat ure fig. 2 - typical collecto r to emitter voltage vs. junction temperature fig. 3 - maximum transient thermal im pedance, junction to case (igbt) thermal and mechanical specifications parameter symbol test conditions min. typ. max. units operating junction temperature range t j -40 - 150 c storage temperature range t stg -40 - 125 junction to case igbt r thjc - - 0.64 c/w diode --0.9 case to sink per module r thcs heatsink compound thermal conductivity = 1 w/mk - 0.06 - clearance (1) externel shortest distance in air between 2 terminals 5.5 - - mm creepage (1) shortest distance along external surface of the ? insulating material between 2 terminals 8-- weight 66 g t c case temperature (c) i c maximum dc collector current (a) 0 20 40 60 80 100 120 140 160 0 1020304050607080 20 40 60 80 100 120 140 160 t j , junction temperature (c) 1.25 1.75 2.25 2.75 v c e , c o l l e c t o r - t o e m i t t e r v o l t a g e ( v ) i c = 50a i c = 25a i c = 12.5a t 1 , rectangular pulse duration (sec) thermal response (z thjc ) 0.0001 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 single pulse (thermal response) d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d =0.01
VS-25MT060WFAPBF www.vishay.com vishay semiconductors revision: 10-jun-15 4 document number: 94539 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 4 - maximum transient thermal impedance, junction to case (diode) fig. 5 - typical capacitance vs . collector to emitter voltage fig. 6 - typical gate charge vs. gate to emitter voltage fig. 7 - typical switching losses vs. gate resistance fig. 8 - typical switching loss es vs. junction temperature 1e-00 6 1e-00 5 0.000 1 0.00 1 0.0 1 0. 1 1 0.00 1 0.0 1 0. 1 1 10 t h j c 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t 1 , rectangular pulse duration (sec) thermal response (z thjc ) 0 . 1 0 0 . 0 1 0 .0 2 0.0 5 1 10 100 1000 v ce (v) 0 1000 2000 3000 4000 5000 6000 7000 c a p a c i t a n c e ( p f ) cies coes cres v ge = 0v, f = 1 mhz c ies = c ge +c gc , c ce shorted c res = c gc c oes = c ce + c gc 0 50 100 150 200 q g, total gate charge (nc) 0.0 4.0 8.0 12.0 16.0 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) i c = 25a v ce = 480v 0 10 20 30 40 50 60 r g , gate resistance ( ) 0.0 0.5 1.0 1.5 s w i t c h i n g l o s s e s ( m j ) v cc = 480v v ge = 15v t j = 25c i c = 25a e off e on 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.1 1 10 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 5.0 v ge = 15v v cc = 480v i c = 50a i c = 25a i c = 12.5a
VS-25MT060WFAPBF www.vishay.com vishay semiconductors revision: 10-jun-15 5 document number: 94539 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - typical switching losses vs. collector to emitter current fig. 10 - turn-off soa fig. 11 - maximum forward voltage drop vs. instantaneous forward current fig. 12 - typical revers e recovery time vs. di f /dt fig. 13 - typical reverse recovery current vs. di f /dt fig. 14 - typical stored charge vs. di f /dt 0 10 20 30 40 50 60 i c, collector current (a) 0.0 0.5 1.0 1.5 2.0 s w i t c h i n g l o s s e s ( m j ) e off e on r g = 5.0 tj = 25c v ge = 15v v cc = 480v 1 10 100 1000 v ce , collector-to-emitter voltage (v) 1 10 100 1000 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v ge = 20v t j = 125 safe operating area 0.4 0.8 1.2 1.6 2.0 2.4 forward voltage drop - v f (v) 1 10 100 t j = 150c t j = 125c t j = 25c in s tantaneou s forward current - i f (a) 20 40 60 80 100 120 140 0 0 0 1 0 0 1 f di /dt - (a/s) i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j trr- (nc) 0 5 10 15 20 25 30 0 0 0 1 0 0 1 f di /dt - (a/s) a i = 50a i = 25a i = 10a v = 200v t = 125c t = 25c r j j f f f irr- ( a) 0 200 400 600 800 1000 1200 1400 0 0 0 1 0 0 1 f di /dt - (a/s) i = 50a i = 25a i = 10a v = 200v t = 125c t = 25c r j j f f f qrr- (nc)
VS-25MT060WFAPBF www.vishay.com vishay semiconductors revision: 10-jun-15 6 document number: 94539 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 15 - typical di (rec)m /dt vs. di f /dt fig. 16 - electrical diagram ordering information table 100 1000 10000 0 0 0 1 0 0 1 f di /dt - (a/s) a i = 50a i = 25a i = 10a f f f v = 200v t = 125c t = 25c r j j di (rec) m/dt- (a /s) 9, 10 4 3 5 6 15, 16 7 8 11, 12 13, 14 2 1 1 - current rating (25 = 25 a) 2 - essential part number 3 - voltage code (060 = 600 v) 4 - speed/type (w = warp igbt) 5 - circuit configuration (f = full bridge) 6 - a = al 2 o 3 dbc substrate 7 8 - pbf = lead (pb)-free device code 5 1 3 2 4 6 7 25 mt 060 w f a pbf - vishay semiconductors product vs- 8
VS-25MT060WFAPBF www.vishay.com vishay semiconductors revision: 10-jun-15 7 document number: 94539 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 circuit configuration links to related documents dimensions www.vishay.com/doc?95245
outline dimensions www.vishay.com vishay semiconductors revision: 01-jul-15 1 document number: 95175 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 mtp dimensions in millimeters note ? unused terminals are not assembled in the package ? 2.1 (x 4) pin s po s ition with tolerance r 2.6 (x 2) dia. 5 (x 4) 0.6 z detail u s e s elf tapping s crew or m 2.5 x x e.g. m 2.5 x 6 or m 2.5 x 8 according to pcb thickne ss u s ed 12 0.3 12 0.3 39.5 0.3 45 0.1 7.4 1.3 48.7 0.3 63.5 0.15 0.8 ra 33.2 0.3 31.8 0.15 27.5 0.3 3.0 2.1 ? 1.1 0.025 19.8 0.1 45 2.5 0.1 16 0.3 1.5 5 5.2 5.4 22.7 14.7 15 12 9 4.2 6 1.2 11.5 14.7 6 3 65 13 9 87 43 2 1 10 11 12
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